STUDY OF PHOTODIODE STRUCTURES IN THE GALLIUM ARSENIDE-CADMIUM SULFIDE SYSTEM
Keywords:
photosensitivity, gallium arsenide, double-barrier structure, saturation currents, current-voltage characteristicAbstract
It is shown in this work that in a two barrier photodiode structure with a common modulated base region, the spectral characteristics for the cases of blockable pn-hetero- (pGaAs-nCdS) and metal-semiconductor (m-pGaAs) junctions can have an identical form, where the formation mechanism is determined by the processes, occurring in the space charge regions located mainly in the common (pGaAs) region.
References
Technique of optical communication. Photodetectors. Translated from English by M. 1988.
Photodetectors of visible and IR ranges. Translated from English by M. 1985.
Kardosh P., Morvitz M. Foreign radio electronics 1986, No. 11, pp. 80-87.
Berchenko N.N., Krevs V.E., Sredin V.G. Semiconductor solid solutions and their application. Moscow, 1982.
Miyans A., Voicht D. Hetero-transitions and metal-semiconductor transitions. Translated from English M. 1975.
Belyaev A.P., Rubets V.P., Tashkhodzhaev Kh.A., Kalinkin I.P. FTP, 1993, T.27, No. 3, p.527-532
